PROGRESS IN 193nm POSITIVE RESISTS

We used the tertiary butyl ester protecting group for the construction of our 193-nm resists. [1] This paper describes an investigation of the impact of acid-cleavable protecting group structure on the properties of a series of model acrylic polymers. In this investigation, factors such as thermoche...

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Bibliographic Details
Published in:Journal of Photopolymer Science and Technology 1996, Vol.9(3), pp.465-474
Main Authors: ALLEN, R. D., SOORIYAKUMARAN, R., OPITZ, J., WALLRAFF, G. M., BREYTA, G., DIPIETRO, R. A., HOFER, D. C., KUNZ, R. R., OKOROANYANWU, U., WILLSON, C. G.
Format: Article
Language:English
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Summary:We used the tertiary butyl ester protecting group for the construction of our 193-nm resists. [1] This paper describes an investigation of the impact of acid-cleavable protecting group structure on the properties of a series of model acrylic polymers. In this investigation, factors such as thermochemical stability, reactivity to photogenerated acid, and dissolution properties of exposed films as a function of dose were examined. The impact of photo-acid structure and its role in the dissolution properties of exposed films will also be discussed. Additionally, we will introduce a new cycloaliphatic polymer family (polynorbomenes) with superior etch resistance, significantly broadening the polymer chemistry available for the construction of new 193-nm photoresists. [2]
ISSN:0914-9244
1349-6336
DOI:10.2494/photopolymer.9.465