TSI Process Using Vapor-Applied Crosslinking Silylating Agents for Realizing sub-Quarter Micron Resolution

The use of TSI processes pushes the limits of both DUV-lithography and e-beam direct writing. However, the volume expansion combined with the drop in glass transition temperature during silylation with monofunctional agents prevents a high resolution. The application of properly mixed mono-and bifun...

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Bibliographic Details
Published in:Journal of Photopolymer Science and Technology 1996, Vol.9(3), pp.497-508
Main Authors: IRMSCHER, MATHIAS, HÖFFLINGER, BERND, SPRINGER, REINHARD, STAUFFER, CRAIG, PETERSON, WILLIAM
Format: Article
Language:English
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Summary:The use of TSI processes pushes the limits of both DUV-lithography and e-beam direct writing. However, the volume expansion combined with the drop in glass transition temperature during silylation with monofunctional agents prevents a high resolution. The application of properly mixed mono-and bifunctional agents causes a crosslinking of the silylated resist and eliminates the flow effect. We selected bis (dimethylamino)methylsilane B(DMA)MS and dimethylsilydiethylamine DMSDEA as components, investigated the mixed agent and developed a TSI process. The optimized process enables the realization of a 0.15μm pattern in 0.7μm thick resist.
ISSN:0914-9244
1349-6336
DOI:10.2494/photopolymer.9.497