Chemically Amplified Silicon Containing Resist for ArF Excimer Laser Lithography

A new positive chemically amplified resist which consists of novel methacrylate terpolymer with bis(trimethylsilyl)isopropyl group and a photoacid generator has been developed for ArF excimer laser photoresists. The polymer structure and properties was evaluated by 1H-NMR, UV, FT-JR. DSC, TGA and GP...

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Bibliographic Details
Published in:Journal of Photopolymer Science and Technology 1997, Vol.10(4), pp.585-588
Main Authors: Kang, Young-long, Lee, Haiwon, Kim, Eung-Ryul, Choi, Sang-Jun, Park, Chun-Geun
Format: Article
Language:English
Subjects:
ArF excimer
bis(trimethylsilyl)isopropyl methacrylate
chemically amplified resist
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Summary:A new positive chemically amplified resist which consists of novel methacrylate terpolymer with bis(trimethylsilyl)isopropyl group and a photoacid generator has been developed for ArF excimer laser photoresists. The polymer structure and properties was evaluated by 1H-NMR, UV, FT-JR. DSC, TGA and GPC. This new terpolymer demonstrates good thermal stability up to 135°C, good dry-etching resistance, high transparency (75%) for a ArF excimer laser exposure. Preliminary line and space patterns were obtained using an ArF excimer laser exposure system.
ISSN:0914-9244
1349-6336
DOI:10.2494/photopolymer.10.585