Chemically Amplified Silicon Containing Resist for ArF Excimer Laser Lithography

A new positive chemically amplified resist which consists of novel methacrylate terpolymer with bis(trimethylsilyl)isopropyl group and a photoacid generator has been developed for ArF excimer laser photoresists. The polymer structure and properties was evaluated by 1H-NMR, UV, FT-JR. DSC, TGA and GP...

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Published in:Journal of Photopolymer Science and Technology 1997, Vol.10(4), pp.585-588
Main Authors: Kang, Young-long, Lee, Haiwon, Kim, Eung-Ryul, Choi, Sang-Jun, Park, Chun-Geun
Format: Article
Language:English
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ArF excimer
bis(trimethylsilyl)isopropyl methacrylate
chemically amplified resist
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container_issue 4
container_start_page 585
container_title Journal of Photopolymer Science and Technology
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creator Kang, Young-long
Lee, Haiwon
Kim, Eung-Ryul
Choi, Sang-Jun
Park, Chun-Geun
description A new positive chemically amplified resist which consists of novel methacrylate terpolymer with bis(trimethylsilyl)isopropyl group and a photoacid generator has been developed for ArF excimer laser photoresists. The polymer structure and properties was evaluated by 1H-NMR, UV, FT-JR. DSC, TGA and GPC. This new terpolymer demonstrates good thermal stability up to 135°C, good dry-etching resistance, high transparency (75%) for a ArF excimer laser exposure. Preliminary line and space patterns were obtained using an ArF excimer laser exposure system.
doi_str_mv 10.2494/photopolymer.10.585
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subjects ArF excimer
bis(trimethylsilyl)isopropyl methacrylate
chemically amplified resist
title Chemically Amplified Silicon Containing Resist for ArF Excimer Laser Lithography
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