A Commercially Viable 193nm Single Layer Resist Platform

We report on our recent investigations on the formulation and processing of 193 nm single layer photoresists based on alternating copolymers of cycloolefins with malefic anhydride. Resists formulated with cycloolefin copolymers are compatible with 0.262N tetramethylammonium developers, have excellen...

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Bibliographic Details
Published in:Journal of Photopolymer Science and Technology 1997, Vol.10(3), pp.511-520
Main Authors: Houlihan, F.M., Wallow, T., Timko, A., Neria, E., Hutton, R., Cirelli, R., Kometani, J. M., Nalamasu, O., Reichmanis, E.
Format: Article
Language:English
Subjects:
193nm
Cycloolefins
deep UV
Dissolution inhibition
etch resistance
Maleic anhydride
Norbornene
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Summary:We report on our recent investigations on the formulation and processing of 193 nm single layer photoresists based on alternating copolymers of cycloolefins with malefic anhydride. Resists formulated with cycloolefin copolymers are compatible with 0.262N tetramethylammonium developers, have excellent adhesion, sensitivity, etch resistance and thermal flow properties. The effect of polymer structure and composition, dissolution inhibitor structure and loading as well as the effect of the photoacid generator on the resist dissolution properties was investigated. Based on the results high contrast formulations were evaluated on a GCA XLS (NA=0.53, 4X reduction optics) deep-UV stepper to exhibit 0.27μm L/S pair resolution with excellent photosensitivity. Based on the dissolution properties and a spectroscopic examination of the resist, we have designed materials that show
ISSN:0914-9244
1349-6336
DOI:10.2494/photopolymer.10.511