ArF Chemically Amplified Negative Resist Using Alicyclic Epoxy Polymer

• Published in: Journal of Photopolymer Science and Technology 1998, Vol.11(3), pp.507-512
• Main Authors: Maeda, Katsumi, Iwasa, Shigeyuki, Nakano, Kaichiro, Hasegawa, Etsuo
• Format: Article
• Language: English
• Subjects: alicyclic polymer; ArF excimer laser lithography; chemically amplified negative resist; epoxy group
• ISSN: 0914-9244; 1349-6336
• DOI: 10.2494/photopolymer.11.507

We designed novel alicyclic epoxy polymers, poly(carboxy- tetracyclo[4.4.0.12, 5.17, 10]dodecyl (meth)acrylate-co-epoxyalicyclic acrylate) (poly(CTCDD(M)Ax-EPAAy)) for an ArF single-layer negative resist. These polymers became insoluble in a TMAH solution by an acid-catalyzed crosslinking reaction of the epoxy groups. A chemically amplified negative resist (consisting of the polymer having a 3, 4-epoxytricyclo [5.2.1.02, 6]decyl group and photoacid generator (PAG)) exhibited a resolution of 0.3 0-μm L/S using a 0.238% TMAH developer and an ArF exposure system (NA=0.55). We also investigated the influence of the polymer structures and additives on the lithographic characteristics. We found that the addition of alicyclic polyalcohol improved the resolution. The three-component resist system composed of the polymer which has 64% of the 2- epoxyethylnorbornyl group, 2, 3-dihydroxy-5-hydroxymethylnorbornane, and PAG resolved a 0.225-μm L/S pattern at 6.8mJ/cm2 with a 2.38% TMAH solution.