Development of Resist Materials for EUVL

The single layer chemically amplified resists are investigated for the extreme ultra-violet lithography. From the results of the sensitivity curve, the positive-tone resist based on poly (p-hydroxystyrene)-type polymers (PHS) have high sensitivities and high gamma values to the EUV exposure waveleng...

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Bibliographic Details
Published in:Journal of Photopolymer Science and Technology 2000, Vol.13(3), pp.385-389
Main Authors: Irie, Shigeo, Shirayone, Shigeru, Mori, Shigeyasu, Oizumi, Hiroaki, Matsuzawa, Nobuyuki, Yano, Ei, Okazaki, Shinji, Watanabe, Takeo, Kinoshita, Hiroo
Format: Article
Language:English
Subjects:
Chemically amplified resist
Extreme ultra-violet lithography
Single layer resist
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Summary:The single layer chemically amplified resists are investigated for the extreme ultra-violet lithography. From the results of the sensitivity curve, the positive-tone resist based on poly (p-hydroxystyrene)-type polymers (PHS) have high sensitivities and high gamma values to the EUV exposure wavelength. Furthermore, by the optimization of both the dosage and the wafer focusing position, we succeed in replicating 0.056-μm-resist-pattern width.
ISSN:0914-9244
1349-6336
DOI:10.2494/photopolymer.13.385