Formation of thick cubic boron nitride films in noble gases

A radio frequency magnetron sputtering method, specifically tailored for the deposition of thick, adherent cubic boron nitride (c-BN) thin films on silicon substrates, was developed. The surface morphology of the boron nitride thin films was changed by altering the noble gases (Kr, Ar, Ne, and He) i...

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Bibliographic Details
Published in:Journal of the Ceramic Society of Japan 2010, Vol.118(1374), pp.164-166
Main Authors: OHORI, Tetsutaro, ASAMI, Hiroki, SHIRAHATA, Jun, SUZUKI, Tsuneo, NAKAYAMA, Tadachika, SUEMATSU, Hisayuki, NIIHARA, Koichi
Format: Article
Language:English
Subjects:
Cubic boron nitride film
Noble gases
Radio frequency magnetron sputtering
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Summary:A radio frequency magnetron sputtering method, specifically tailored for the deposition of thick, adherent cubic boron nitride (c-BN) thin films on silicon substrates, was developed. The surface morphology of the boron nitride thin films was changed by altering the noble gases (Kr, Ar, Ne, and He) in the chamber present during the sputtering. The sample prepared in the gas with He showed especially good adhesion. This method enabled us to grow a 1.7-μm-thick c-BN thin film on a Si(100) substrate in only rare gases at a low temperature for the first time. Fourier transform infrared spectroscopy (FT-IR) indicated that the fraction of sp3-bonded BN in the thick films was above 60%.
ISSN:1882-0743
1348-6535
DOI:10.2109/jcersj2.118.164