Sb2S3 quantum dots: diffusion-controlled growth and characterization

The quantum dots of antimony trisulphide, a potential semiconductor for various applications, are grown in glass matrix for the first time and are characterized by various techniques. The dependence of the average dot size on growth parameters like growth temperature and time is systematically studi...

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Bibliographic Details
Published in:Physica status solidi. PSS-RRL. Rapid research letters 2013-11, Vol.7 (11), p.975-979
Main Authors: Mishra, Rakesh K., Vedeshwar, Agnikumar G., Tandon, Ram P.
Format: Article
Language:English
Subjects:
glass
optical properties
Quantum dots
Sb2S3
Solid state physics
TEM
Online Access:Get full text
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Summary:The quantum dots of antimony trisulphide, a potential semiconductor for various applications, are grown in glass matrix for the first time and are characterized by various techniques. The dependence of the average dot size on growth parameters like growth temperature and time is systematically studied for the dot size range of 5–80 nm. The linear blue shift of band gap of dots with inverse square of dot size clearly indicates the typical behavior of quantum dots in a strong quantum confinement regime. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) The antimony trisulphide (Sb2S3) quantum dots have been grown for the first time in borosilicate glass matrix by precipitation of antimony and sulphur with supporting characterizations. The process for dot size control is discussed. Dots exhibit the novel behavior of strong quantum confinement manifested by the blue shift of band gap with inverse square of dot size.
ISSN:1862-6254
1862-6270
DOI:10.1002/pssr.201308082