Synthesis and Structures of Highly Conducting Charge-Transfer Salts of Selenium Containing TTM-TTP Derivatives

• Published in: Bulletin of the Chemical Society of Japan 2004-08, Vol.77 (8), p.1449-1458
• Main Authors: Ashizawa, Minoru, Akutsu, Akane, Noda, Bunpei, Nii, Hirofumi, Kawamoto, Tadashi, Mori, Takehiko, Nakayashiki, Takashi, Misaki, Yohji, Tanaka, Kazuyoshi, Takimiya, Kazuo, Otsubo, Tetsuo
• Format: Article
• Language: English
• ISSN: 0009-2673; 1348-0634
• DOI: 10.1246/bcsj.77.1449

Selenium-substituted TTM-TTP (2,5-bis[4,5-bis(methylthio)-1,3-dithiol-2-ylidene]-1,3,4,6-tetrathiapentalene) derivatives (1a–1d), in which several 1,3-dithiole rings of the bis-fused TTF framework are replaced by 1,3-diselenole rings, have been prepared. In particular, we have accomplished the first selenium substitution of the inner TTP part (1a). The 1:1 composition iodine salt, (1a)I3, is an insulator constructed of the donor trimers. The 1:1 GaCl4 salt, (1a)GaCl4, has a uniform column isostructural to the sulfur analog, (TTM-TTP)FeBr1.8Cl2.2; it exhibits metallic conduction down to about 60 K, the lowest metal–insulator (M–I) transition temperature in 1:1 salts. The donors 1c and 1d give the iodine salts isostructural to the sulfur analog, (TTM-TTP)(I3)5/3. By the selenium substitution, the M–I transition of (1d)(I3)5/3 is entirely suppressed.