High-Quality Interface in //// MIS Structures With In Situ Pre-Gate Plasma Nitridation

We report an in situ low-damage pre-gate treatment technology in an atomic layer deposition (ALD) system prior to the ALD- Al 2 O 3 deposition, to realize high-quality Al 2 O 3 /III-nitride (III-N) interface. The technology effectively removes the poor quality native oxide on the III-N surface while...

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Bibliographic Details
Published in:IEEE electron device letters 2013-12, Vol.34 (12), p.1497-1499
Main Authors: Shu Yang, Zhikai Tang, King-Yuen Wong, Yu-Syuan Lin, Cheng Liu, Yunyou Lu, Sen Huang, Chen, Kevin J.
Format: Article
Language:English
Subjects:
Aluminum gallium nitride
Aluminum oxide
Dielectrics
Gallium nitride
Gate leakage
gate stack
HEMTs
hysteresis
III-nitride
MIS-HEMTs
Plasmas
V_{\rm TH} instability
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Summary:We report an in situ low-damage pre-gate treatment technology in an atomic layer deposition (ALD) system prior to the ALD- Al 2 O 3 deposition, to realize high-quality Al 2 O 3 /III-nitride (III-N) interface. The technology effectively removes the poor quality native oxide on the III-N surface while forming an ultrathin monocrystal-like nitridation interlayer (NIL) between Al 2 O 3 and III-N surface. With the pre-gate treatment technology, high-performance Al 2 O 3 (NIL)/GaN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors are demonstrated, exhibiting well-behaved electrical characteristics including suppressed gate leakage current, a small subthreshold slope of ~64 mV/dec, and a small hysteresis of ~0.09 V.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2013.2286090