Facile Fabrication Procedure for C60-Doped Silicon Oxide Thin Films

C60-doped silicon oxide thin films can be prepared easily by sol-gel processing using a mixture of phenyltriethoxysilane and tetraethoxysilane as the silicon oxide sources. Preparation of C60-dissolved single-phase starting solutions is practicable by employing phenyltriethoxysilane which acts as a...

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Published in:Chemistry letters 1997, Vol.26 (10), p.995-996
Main Authors: Hasegawa, Isao, Shibusa, Koji, Kobayashi, Satoshi, Nonomura, Shuichi, Nitta, Shoji
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Language:English
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description C60-doped silicon oxide thin films can be prepared easily by sol-gel processing using a mixture of phenyltriethoxysilane and tetraethoxysilane as the silicon oxide sources. Preparation of C60-dissolved single-phase starting solutions is practicable by employing phenyltriethoxysilane which acts as a solubilization agent of C60 as well as the silicon oxide source.
doi_str_mv 10.1246/cl.1997.995
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title Facile Fabrication Procedure for C60-Doped Silicon Oxide Thin Films
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