Novel Electron-Beam Molecular Resists with High Resolution and High Sensitivity for Nanometer Lithography

A novel class of chemically-amplified, electron-beam molecular resists for nanometer lithography were created. These molecular resists functioned as positive resists in the presence of an acid generator, exhibiting a high sensitivity of ≈2 μC cm−2 and enabling the fabrication of ≈25 nm line patterns...

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Bibliographic Details
Published in:Chemistry letters 2004-06, Vol.33 (6), p.706-707
Main Authors: Kadota, Toshiaki, Kageyama, Hiroshi, Wakaya, Fujio, Gamo, Kenji, Shirota, Yasuhiko
Format: Article
Language:English
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Summary:A novel class of chemically-amplified, electron-beam molecular resists for nanometer lithography were created. These molecular resists functioned as positive resists in the presence of an acid generator, exhibiting a high sensitivity of ≈2 μC cm−2 and enabling the fabrication of ≈25 nm line patterns.
ISSN:0366-7022
1348-0715
DOI:10.1246/cl.2004.706