Off -Axis Electron Holography for 2D Dopant Profiling of Ultra-Shallow Junctions

We briefly discuss how to set-up our Hitachi HF-2000 transmission electron microscope for medium magnification holography. Then we apply this technique to examine the activation of an as-doped wafer by annealing. We also present voltage profiles of the source-drain region of a CMOS transistor with 7...

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Bibliographic Details
Published in:E-journal of surface science and nanotechnology 2004, Vol.2, pp.119-124
Main Authors: Frost, Bernhard G., Joy, David C., Thesen, Alex
Format: Article
Language:English
Subjects:
Electron holography
Electron microscopy
Nano-scale imaging, measurement, and manipulation technology
pn junction
Transistor
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Summary:We briefly discuss how to set-up our Hitachi HF-2000 transmission electron microscope for medium magnification holography. Then we apply this technique to examine the activation of an as-doped wafer by annealing. We also present voltage profiles of the source-drain region of a CMOS transistor with 75 nm gate architecture taken from an off-the-shelf Intel PIII processor. Special attention is given to the analysis of the reconstructed holograms. [DOI: 10.1380/ejssnt.2004.119]
ISSN:1348-0391
1348-0391
DOI:10.1380/ejssnt.2004.119