Relationship Between Resistance Modulation and Magnetoelectric Direction in Cr2O3/ultrathin (La,Sr)MnO3 Heterostructure

We investigated the relationship between the electric-field-induced resistance change and the magnetoelectric effect of a Cr2O3/La0.7Sr0.3MnO3 (LSMO) magnetic heterostructure. When this heterostructure was field cooled, its magnetization curves exhibited a positive shift due to an exchange bias. Bec...

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Bibliographic Details
Published in:E-journal of surface science and nanotechnology 2011/04/02, Vol.9, pp.138-141
Main Authors: Kito, Shinya, Yokota, Takeshi, Aoyagi, Rintaro, Gomi, Manabu
Format: Article
Language:English
Subjects:
Ceramic thin film
Electrical transport
Heterojunctions
Magnetic interface
Sputter deposition
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Summary:We investigated the relationship between the electric-field-induced resistance change and the magnetoelectric effect of a Cr2O3/La0.7Sr0.3MnO3 (LSMO) magnetic heterostructure. When this heterostructure was field cooled, its magnetization curves exhibited a positive shift due to an exchange bias. Because of the exchange behavior, the LSMO film resistance changed when an electric field was applied to the Cr2O3 gate. This resistance change is probably due to interaction modulation of the magnetoelectric interface between the Cr2O3 and LSMO films. [DOI: 10.1380/ejssnt.2011.138]
ISSN:1348-0391
1348-0391
DOI:10.1380/ejssnt.2011.138