Evaluation of Strain Measurement in a Die-to-Interposer Chip Using In Situ Synchrotron X-Ray Diffraction and Finite-Element Analysis

To decrease the size of portable devices, this study incorporates a stacked three-dimensional integrated circuit architecture into advanced packaging techniques. The traditional FR-4 substrate was substituted with silicon interposers. Because silicon is rigid and highly resistant to deformation, thi...

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Bibliographic Details
Published in:Journal of electronic materials 2014, Vol.43 (1), p.52-56
Main Authors: Hsu, Hsueh-Hsien, Chiu, Tz-Cheng, Chang, Tao-Chih, Huang, Shin-Yi, Lee, Hsin-Yi, Ku, Ching-Shun, Lin, Yang-Yi, Su, Chien-Hao, Chou, Li-Wei, Ouyang, Yao-Tsung, Huang, YI-Ting, Wu, Albert T.
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Chemistry and Materials Science
Diffraction
Electronics and Microelectronics
Finite element analysis
Instrumentation
Integrated circuits
Materials Science
Optical and Electronic Materials
Solid State Physics
Strain
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Summary:To decrease the size of portable devices, this study incorporates a stacked three-dimensional integrated circuit architecture into advanced packaging techniques. The traditional FR-4 substrate was substituted with silicon interposers. Because silicon is rigid and highly resistant to deformation, this minimizes thermal stress caused by thermal expansion mismatch in the structure. This study shows that underfill applied stress to the dies when the temperature was varied, threatening the devices. Damage was most likely to occur at the die corners. The stresses were measured in situ at different temperatures using synchrotron radiation x-ray analysis. Simulation results confirm the measured data trends.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-013-2828-0