Post-Silicon Characterization and On-Line Prediction of Transient Thermal Field in Integrated Circuits Using Thermal System Identification

Thermal system identification (TSI) is presented as a methodology to characterize and estimate the transient thermal field of a packaged IC for various workloads considering chip-to-chip variations in electrical and thermal properties. The time-frequency duality is used to identify the thermal syste...

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Bibliographic Details
Published in:IEEE transactions on components, packaging, and manufacturing technology (2011) packaging, and manufacturing technology (2011), 2014-01, Vol.4 (1), p.37-45
Main Authors: Minki Cho, Ahmed, Khondker Zakir, Song, William J., Yalamanchili, Sudhakar, Mukhopadhyay, Saibal
Format: Article
Language:English
Subjects:
Fourier transform
frequency-domain modeling
Heating
post-silicon temperature prediction
process variations
Semiconductor device measurement
Temperature
Temperature measurement
Temperature sensors
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Summary:Thermal system identification (TSI) is presented as a methodology to characterize and estimate the transient thermal field of a packaged IC for various workloads considering chip-to-chip variations in electrical and thermal properties. The time-frequency duality is used to identify the thermal system as a low-pass filter in frequency domain through on-line power/thermal measurements on a packaged IC. The identified characteristic system for an individual IC is used for on-line prediction of the transient thermal field of that specific IC for a power pattern. A test-chip, fabricated in 130-nm CMOS, demonstrates the effectiveness of TSI in post-silicon characterization and prediction of transient thermal field. The application TSI in thermal analysis of multicore processors is presented.
ISSN:2156-3950
2156-3985
DOI:10.1109/TCPMT.2013.2271504