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Post-Silicon Characterization and On-Line Prediction of Transient Thermal Field in Integrated Circuits Using Thermal System Identification
Thermal system identification (TSI) is presented as a methodology to characterize and estimate the transient thermal field of a packaged IC for various workloads considering chip-to-chip variations in electrical and thermal properties. The time-frequency duality is used to identify the thermal syste...
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Published in: | IEEE transactions on components, packaging, and manufacturing technology (2011) packaging, and manufacturing technology (2011), 2014-01, Vol.4 (1), p.37-45 |
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container_issue | 1 |
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container_title | IEEE transactions on components, packaging, and manufacturing technology (2011) |
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creator | Minki Cho Ahmed, Khondker Zakir Song, William J. Yalamanchili, Sudhakar Mukhopadhyay, Saibal |
description | Thermal system identification (TSI) is presented as a methodology to characterize and estimate the transient thermal field of a packaged IC for various workloads considering chip-to-chip variations in electrical and thermal properties. The time-frequency duality is used to identify the thermal system as a low-pass filter in frequency domain through on-line power/thermal measurements on a packaged IC. The identified characteristic system for an individual IC is used for on-line prediction of the transient thermal field of that specific IC for a power pattern. A test-chip, fabricated in 130-nm CMOS, demonstrates the effectiveness of TSI in post-silicon characterization and prediction of transient thermal field. The application TSI in thermal analysis of multicore processors is presented. |
doi_str_mv | 10.1109/TCPMT.2013.2271504 |
format | article |
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The application TSI in thermal analysis of multicore processors is presented.</description><subject>Fourier transform</subject><subject>frequency-domain modeling</subject><subject>Heating</subject><subject>post-silicon temperature prediction</subject><subject>process variations</subject><subject>Semiconductor device measurement</subject><subject>Temperature</subject><subject>Temperature measurement</subject><subject>Temperature sensors</subject><issn>2156-3950</issn><issn>2156-3985</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNo9kE1qwzAQhU1poSHNBdqNoGunGsm27GUxTRtISSDOWsj2OFFw5FRSFukReuo6P2QWM8PwvnnwguAZ6BiAZm9FvvguxowCHzMmIKbRXTBgECchz9L4_rbH9DEYObelfcUpFZQPgr9F53y41K2uOkPyjbKq8mj1r_K6PyhTk7kJZ9ogWVisdXU-dw0prDJOo_Gk2KDdqZZMNLY10YZMjce1VR5rkmtbHbR3ZOW0Wd-ky6PzuCPTuud1o6uz2VPw0KjW4eg6h8Fq8lHkX-Fs_jnN32dhxbLYh2lCy5LTmjWgmpRnnCqeQgKnlvASooQLXipaIwKICCgwTFkEPYO0EYoPg9fL373tfg7ovNx2B2t6SwmRiLmIeCR6FbuoKts5Z7GRe6t3yh4lUHmKXZ5jl6fY5TX2Hnq5QBoRb0ASpyIFxv8BNQt-5w</recordid><startdate>201401</startdate><enddate>201401</enddate><creator>Minki Cho</creator><creator>Ahmed, Khondker Zakir</creator><creator>Song, William J.</creator><creator>Yalamanchili, Sudhakar</creator><creator>Mukhopadhyay, Saibal</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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subjects | Fourier transform frequency-domain modeling Heating post-silicon temperature prediction process variations Semiconductor device measurement Temperature Temperature measurement Temperature sensors |
title | Post-Silicon Characterization and On-Line Prediction of Transient Thermal Field in Integrated Circuits Using Thermal System Identification |
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