Effect of pressure on the giant magnetoresistance in Co/Cu magnetic multilayers

• Published in: Journal of the Physical Society of Japan 2006-02, Vol.75 (2), p.24702
• Main Authors: SUENAGA, Kazufumi, OOMI, Gendo, SAKAI, Takeshi, SAITO, Kesami, TAKANASHI, Koki, FUJIMORI, Hiroyasu
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Giant magnetoresistance; Magnetic properties and materials; Magnetotransport phenomena, materials for magnetotransport; Physics
• ISSN: 0031-9015; 1347-4073
• DOI: 10.1143/jpsj.75.024702

The effect of pressure and magnetic field on the temperature dependent electrical resistivity ρ(T) of the [Co(1.02 nm)/Cu(tCu nm)]25 magnetic multilayers (MML) with tCu=0.76 [ferromagnetic (F)] and 1.05 [antiferromagnetic (AF)] has been investigated at low temperature. MR ratio δρ/ρs for tCu=1.05 and 0.76 decreases with increasing pressure. The pressure dependent δρ/ρs for tCu=1.05 is more significant than that for 0.76. ρ(T) at H=0 and above saturation field Hs (H=2 T) for Co/Cu MMLs is found to show T2-dependence in the relatively wide temperature range, 4.2≤T≤20 K, at low temperature. The coefficient of T2 term (=A) for F-state is larger than that for AF-state at ambient pressure. The change of A for tCu=1.05 at H=0 is smaller than that at H=2 T. These results are discussed on the basis of the electron scattering at interfaces due to magnons or spin-wave.