Formation of Ultra Narrow Lamellar Structures in POSS-containing Triblock Terpolymers

An ultra narrow line structure was prepared in the lamellar morphology of polyhedral oligomeric silsesquioxane (POSS)-containing triblock terpolymer in the bulk via the self-assembly. The triblock terpolymers, which comprised polystyrene, POSS-containing poly(methacrylate) (PMAPOSS) and poly(methyl...

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Bibliographic Details
Published in:Journal of Photopolymer Science and Technology 2013/06/25, Vol.26(1), pp.39-44
Main Authors: Goseki, Raita, Ishizune, Takashi, Hirao, Akira, Hayakawa, Teruaki
Format: Article
Language:English
Subjects:
polyhedral oligomeric silsesquioxane (POSS)
self-assembly
triblock terpolymer
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Summary:An ultra narrow line structure was prepared in the lamellar morphology of polyhedral oligomeric silsesquioxane (POSS)-containing triblock terpolymer in the bulk via the self-assembly. The triblock terpolymers, which comprised polystyrene, POSS-containing poly(methacrylate) (PMAPOSS) and poly(methyl methacrylate), were synthesized by anionic polymerization. The self-assembled structures were studied by using a transmission electron microscopy (TEM) and a small-angle X-ray scattering (SAXS). It was found that a narrow PMAPOSS domain was layered in triple-domain lamellar, which caused by the effect of strongly segregation with the middle PMAPOSS block. The total d-spacing was 32 nm, and the smallest width of PMAPOSS domain layer was ca. 4 nm.
ISSN:0914-9244
1349-6336
DOI:10.2494/photopolymer.26.39