Modeling of the interstitial diffusion of boron in crystalline silicon

The redistribution of ion-implanted boron in crystalline silicon under fast low-temperature annealing has been modeled. It has been shown that in the region of low impurity concentration "tails" are formed by long-range migration of interstitial boron atoms.

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Bibliographic Details
Published in:Journal of engineering physics and thermophysics 2012-07, Vol.85 (4), p.926-931
Main Authors: Velichko, O. I., Aksenov, V. V., Kovaleva, A. P.
Format: Article
Language:English
Subjects:
Analysis
Classical Mechanics
Complex Systems
Engineering
Engineering Thermodynamics
Heat and Mass Transfer
Industrial Chemistry/Chemical Engineering
Silicon
Thermodynamics
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Description
Summary:The redistribution of ion-implanted boron in crystalline silicon under fast low-temperature annealing has been modeled. It has been shown that in the region of low impurity concentration "tails" are formed by long-range migration of interstitial boron atoms.
ISSN:1062-0125
1573-871X
DOI:10.1007/s10891-012-0731-9