Modeling high-concentration phosphorus diffusion in crystalline silicon

Phosphorus diffusion in crystalline silicon in doping from a surface source at a temperature of 840°C and a duration of 10 min has been modeled. Good agreement with experimental data has been obtained, which confirms the adequacy of the employed model of high-concentration phosphorus diffusion. This...

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Bibliographic Details
Published in:Journal of engineering physics and thermophysics 2013-05, Vol.86 (3), p.667-675
Main Authors: Velichko, O. I., Aksenov, V. V., Anufriev, L. P., Golubev, N. F., Komarov, A. F.
Format: Article
Language:English
Subjects:
Analysis
Classical Mechanics
Complex Systems
Engineering
Engineering Thermodynamics
Heat and Mass Transfer
Industrial Chemistry/Chemical Engineering
Silicon
Thermodynamics
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Summary:Phosphorus diffusion in crystalline silicon in doping from a surface source at a temperature of 840°C and a duration of 10 min has been modeled. Good agreement with experimental data has been obtained, which confirms the adequacy of the employed model of high-concentration phosphorus diffusion. This model takes account of the drift of self-interstitials in the field of internal elastic stresses.
ISSN:1062-0125
1573-871X
DOI:10.1007/s10891-013-0881-4