Epitaxial Growth and Characterization of Self-Doping } Multi-Quantum Well Materials

This paper presents self-doping Si 1-x Ge x /Si multiquantum wells (MQWs) with35 nm buffer layers where self-doping occurs to allow free carriers in the quantum well. The film grown through ultra-high vacuum chemical vapor deposition method can easily achieve a good lattice quality. The crystal latt...

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Bibliographic Details
Published in:Journal of microelectromechanical systems 2014-02, Vol.23 (1), p.213-219
Main Authors: Jiang, Bo, Dong, Tao, Su, Yan, He, Yong, Wang, Kaiying
Format: Article
Language:English
Subjects:
Boron
Crystal growth
Epitaxial growth
Lattices
materials testing
Microelectronics
Quantum well devices
quantum wells
Scanning electron microscopy
Silicon
thin films
X-ray scattering
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Summary:This paper presents self-doping Si 1-x Ge x /Si multiquantum wells (MQWs) with35 nm buffer layers where self-doping occurs to allow free carriers in the quantum well. The film grown through ultra-high vacuum chemical vapor deposition method can easily achieve a good lattice quality. The crystal lattice is verified through scanning electron microscopy, X-ray diffraction,and secondary ion mass spectrometry. Unique structures are applied in the Temperature Coefficient of Resistance (TCR) measurement to obtain electrical characteristics of MQWs. The TCR of Si 0.65 Ge 0.35 /Si obtained in the experiment is about-2.5%/K at 20 °C, which meets the requirements of a thermistor. The TCR decreases from 2.5%/K to 1.1%/K as the size of the MQWs increases from 100 μm×100 μm to 400 μm×400 μm. Annealing is necessary for the formation of an ohmic contact between electrodes and high contact layers.
ISSN:1057-7157
1941-0158
DOI:10.1109/JMEMS.2013.2269612