Low-Frequency Noise Sources in Advanced UTBB FD-SOI MOSFETs

The low-frequency noise (LFN) sources in ultrathin body (8.7 nm) and buried oxide (10 nm) fully depleted silicon-on-insulator (UTBB FD-SOI) n- and p-channel MOSFETs are analyzed. Both flicker and Lorentzian-type noise were observed, showing a dependence on the channel dimensions and the front/back g...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2014-04, Vol.61 (4), p.1161-1167
Main Authors: Theodorou, Christoforos G., Ioannidis, Eleftherios G., Andrieu, Francois, Poiroux, Thierry, Faynot, Olivier, Dimitriadis, Charalabos A., Ghibaudo, Gerard
Format: Article
Language:English
Subjects:
Dielectrics
Engineering Sciences
Generation-recombination (g-r) noise
Geometry
Logic gates
low-frequency noise (LFN)
Micro and nanotechnologies
Microelectronics
MOSFET
Noise
Noise measurement
Silicon
ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FDSOI MOSFETs)
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Summary:The low-frequency noise (LFN) sources in ultrathin body (8.7 nm) and buried oxide (10 nm) fully depleted silicon-on-insulator (UTBB FD-SOI) n- and p-channel MOSFETs are analyzed. Both flicker and Lorentzian-type noise were observed, showing a dependence on the channel dimensions and the front/back gate bias conditions. The flicker noise component can be described by the carrier number with correlated mobility fluctuations model considering contribution from both interfaces. The Lorentzian-type noise originates mainly from generation-recombination (g-r) traps in the Si film, uniformly distributed in thin layers next to the drain and source contacts, and in some cases from g-r traps located at the front Si/oxide interface. No different noise behavior was observed between n- and p-channel devices operating in front-gate mode. Finally, LFN comparison between FD-SOI devices of different technologies is presented for the first time, demonstrating the impact of the UTBB technology on the LFN properties.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2014.2307201