Low-Frequency Noise Sources in Advanced UTBB FD-SOI MOSFETs

• Published in: IEEE transactions on electron devices 2014-04, Vol.61 (4), p.1161-1167
• Main Authors: Theodorou, Christoforos G., Ioannidis, Eleftherios G., Andrieu, Francois, Poiroux, Thierry, Faynot, Olivier, Dimitriadis, Charalabos A., Ghibaudo, Gerard
• Format: Article
• Language: English
• Subjects: Dielectrics; Engineering Sciences; Generation-recombination (g-r) noise; Geometry; Logic gates; low-frequency noise (LFN); Micro and nanotechnologies; Microelectronics; MOSFET; Noise; Noise measurement; Silicon; ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FDSOI MOSFETs)
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2014.2307201

The low-frequency noise (LFN) sources in ultrathin body (8.7 nm) and buried oxide (10 nm) fully depleted silicon-on-insulator (UTBB FD-SOI) n- and p-channel MOSFETs are analyzed. Both flicker and Lorentzian-type noise were observed, showing a dependence on the channel dimensions and the front/back gate bias conditions. The flicker noise component can be described by the carrier number with correlated mobility fluctuations model considering contribution from both interfaces. The Lorentzian-type noise originates mainly from generation-recombination (g-r) traps in the Si film, uniformly distributed in thin layers next to the drain and source contacts, and in some cases from g-r traps located at the front Si/oxide interface. No different noise behavior was observed between n- and p-channel devices operating in front-gate mode. Finally, LFN comparison between FD-SOI devices of different technologies is presented for the first time, demonstrating the impact of the UTBB technology on the LFN properties.