The Effect of Growth Pressure and Growth Rate on the Properties of Mg-Doped GaN

In this work, the effects of growth pressure and growth rate on electrical and structural properties of Mg-doped GaN were investigated. It has been shown that enhanced growth rates induced by higher growth pressures may lead to decreased structural and electrical properties of p -type GaN layers. If...

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Bibliographic Details
Published in:Journal of electronic materials 2014-04, Vol.43 (4), p.1244-1248
Main Authors: Fu, Binglei, Liu, Naixin, Zhang, Ning, Si, Zhao, Wei, Xuecheng, Wang, Xiaodong, Lu, Hongxi, Liu, Zhe, Wei, Tongbo, Yi, Xiaoyan, Li, Jinmin, Wang, Junxi
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Chemistry and Materials Science
Cross-disciplinary physics: materials science
rheology
Electric properties
Electronics and Microelectronics
Exact sciences and technology
Instrumentation
Light emitting diodes
Materials Science
Methods of crystal growth
physics of crystal growth
Methods of deposition of films and coatings
film growth and epitaxy
Optical and Electronic Materials
Physics
Solid State Physics
Theory and models of crystal growth
physics of crystal growth, crystal morphology and orientation
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Summary:In this work, the effects of growth pressure and growth rate on electrical and structural properties of Mg-doped GaN were investigated. It has been shown that enhanced growth rates induced by higher growth pressures may lead to decreased structural and electrical properties of p -type GaN layers. If the growth rate is kept unchanged, higher growth pressures will be beneficial for the quality of Mg-doped GaN due to the enhanced NH 3 overpressure.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-014-3005-9