Optically Pumped Edge-Emitting GaAs-Based Laser With Direct Orange Emission

Room temperature lasing operation at 599 nm for a AlGaInP/AlInP/GaAs edge-emitting laser structure is reported. The structure was grown on GaAs substrate and pumped optically with a 532 nm Q-switched laser. The lasing threshold for a 2 mm long and 25 μm wide ridge waveguide structure was 30 mW of av...

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Bibliographic Details
Published in:IEEE photonics technology letters 2014-02, Vol.26 (4), p.384-386
Main Authors: Toikkanen, Lauri, Harkonen, Antti, Lyytikainen, Jari, Leinonen, Tomi, Laakso, Antti, Tukiainen, Antti, Viheriala, Jukka, Bister, Mariia, Guina, Mircea
Format: Article
Language:English
Subjects:
Edge-emitting-lasers
Gallium arsenide
Measurement by laser beam
Microchip lasers
Optical pumping
optically-pumped lasers
orange lasers
Pump lasers
semiconductor lasers
visible lasers
Waveguide lasers
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Summary:Room temperature lasing operation at 599 nm for a AlGaInP/AlInP/GaAs edge-emitting laser structure is reported. The structure was grown on GaAs substrate and pumped optically with a 532 nm Q-switched laser. The lasing threshold for a 2 mm long and 25 μm wide ridge waveguide structure was 30 mW of average pump power. The orange output beam had an optical spectral width of 1.7 nm.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2013.2294726