Understanding the Origin of the Low Performance of Chemically Grown Silicon Nanowires for Solar Energy Conversion

Wired: Electrochemical impedance spectroscopy (ESI) reveals that high energy‐conversion efficiencies are attainable on vertically aligned Si nanowires obtained by electroless etching (see picture). The key reason for the low performance of chemically grown Si nanowires lies in the mid‐gap traps as a...

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Bibliographic Details
Published in:Angewandte Chemie (International ed.) 2011-03, Vol.50 (10), p.2334-2338
Main Authors: Yuan, Guangbi, Aruda, Kenneth, Zhou, Sa, Levine, Andrew, Xie, Jin, Wang, Dunwei
Format: Article
Language:English
Subjects:
chemical vapor deposition
electrochemical impedance spectroscopy
energy conversion
silicon
solar cells
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Summary:Wired: Electrochemical impedance spectroscopy (ESI) reveals that high energy‐conversion efficiencies are attainable on vertically aligned Si nanowires obtained by electroless etching (see picture). The key reason for the low performance of chemically grown Si nanowires lies in the mid‐gap traps as a result of growth chemistry.
ISSN:1433-7851
1521-3773
DOI:10.1002/anie.201006617