Carbon Interlayer Between CVD SiC and SiO^sub 2^ in High-Temperature Passive Oxidation

The oxidation behavior of high-purity silicon carbide (SiC) prepared by chemical vapor deposition was investigated by thermogravimetry, transmission electron microscopy, and Raman spectroscopy in the temperature range 1534-1902 K in pure O^sub 2^. The carbon layer formed at the SiC/SiO^sub 2^ interf...

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Bibliographic Details
Published in:Journal of the American Ceramic Society 2014-05, Vol.97 (5), p.1633
Main Authors: Katsui, Hirokazu, Oguma, Miyuki, Goto, Takashi
Format: Article
Language:English
Subjects:
Carbon
Chemical vapor deposition
Diffusion
High temperature
Oxidation
Silicon carbide
Transmission electron microscopy
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Summary:The oxidation behavior of high-purity silicon carbide (SiC) prepared by chemical vapor deposition was investigated by thermogravimetry, transmission electron microscopy, and Raman spectroscopy in the temperature range 1534-1902 K in pure O^sub 2^. The carbon layer formed at the SiC/SiO^sub 2^ interface upon oxidation above 1784 K. Raman peaks corresponding to D- and G-bands could be identified from the carbon layer. Bubbles were observed in the SiO^sub 2^ scale after the oxidation at 1873 K. This could be attributed to the accumulation of CO gas at the SiC/SiO^sub 2^ interface, resulting in the formation of the carbon layer and bubbles. These suggest that the oxidation rate of SiC is limited by the outward diffusion of CO in the SiO^sub 2^ scale in this temperature range.
ISSN:0002-7820
1551-2916