243 GHz low-noise amplifier MMICs and modules based on metamorphic HEMT technology

Two compact H-band (220–325 GHz) low-noise millimeter-wave monolithic integrated circuit (MMIC) amplifiers have been developed, based on a grounded coplanar waveguide (GCPW) technology utilizing 50 and 35 nm metamorphic high electron mobility transistors (mHEMTs). For low-loss packaging of the circu...

Full description

Saved in:
Bibliographic Details
Published in:International journal of microwave and wireless technologies 2014-06, Vol.6 (3-4), p.215-223
Main Authors: Tessmann, Axel, Hurm, Volker, Leuther, Arnulf, Massler, Hermann, Weber, Rainer, Kuri, Michael, Riessle, Markus, Stulz, Hans-Peter, Zink, Martin, Schlechtweg, Michael, Ambacher, Oliver, Närhi, Tapani
Format: Article
Language:English
Subjects:
Research Paper
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Two compact H-band (220–325 GHz) low-noise millimeter-wave monolithic integrated circuit (MMIC) amplifiers have been developed, based on a grounded coplanar waveguide (GCPW) technology utilizing 50 and 35 nm metamorphic high electron mobility transistors (mHEMTs). For low-loss packaging of the circuits, a set of waveguide-to-microstrip transitions has been realized on 50-μm-thick GaAs substrates demonstrating an insertion loss of
ISSN:1759-0787
1759-0795
DOI:10.1017/S1759078714000166