Growth of Sr^sub 2^FeMoO^sub 6^ Based Tri-layer Structure for Room Temperature Magnetoresistive Applications

Tunnel magnetoresistance in ... based tri-layered structure was studied at room temperature. The ... tri-layered structure was grown by pulse laser deposition on STO buffered Si(100) substrate. The X-ray diffraction and Micro Raman studies confirm the polycrystalline phase formation of SFMO thin fil...

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Bibliographic Details
Published in:Integrated ferroelectrics 2014-01, Vol.157 (1), p.89
Main Authors: Kumar, Nitu, Misra, P, Kotnala, R K, Gaur, Anurag, Katiyar, R S
Format: Article
Language:English
Subjects:
Diffraction
Polycrystals
Substrates
Temperature effects
Thin films
Online Access:Get full text
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Summary:Tunnel magnetoresistance in ... based tri-layered structure was studied at room temperature. The ... tri-layered structure was grown by pulse laser deposition on STO buffered Si(100) substrate. The X-ray diffraction and Micro Raman studies confirm the polycrystalline phase formation of SFMO thin films without any impurity phases. The single layer SFMO thin film shows the good ferromagnetic behavior with saturation magnetization of ~1.48 ...B/ f.u. at room temperature. The high value of tunneling magnetoresistance of ~7% of tri-layer structure at room temperature was attributed to spin dependent tunneling through uniform STO barrier layer. The room temperature tunneling magnetoresistance in SFMO tri-layer structure open the future prospect for their possible integration to room temperature spintronic devices. (ProQuest: ... denotes formulae/symbols omitted.)
ISSN:1058-4587
1607-8489