Electromechanical Diode Cell Scaling for High-Density Nonvolatile Memory

A simple electromechanical diode nonvolatile memory (NVM) cell design was recently proposed and demonstrated to be well suited for implementation in a cross-point memory array architecture. In this paper, a scaling methodology for this new NVM technology is developed with the aid of a calibrated ana...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 2014-05, Vol.61 (5), p.1382-1387
Main Authors: Hutin, Louis, Wookhyun Kwon, Chuang Qian, Tsu-Jae King Liu
Format: Article
Language:English
Subjects:
Analytical models
Arrays
Calibration
Computer architecture
Diodes
Electric potential
Electrostatics
Force
Mathematical analysis
Microelectromechanical devices
Microprocessors
Nanostructure
Nonvolatile memory
Programming
Structural beams
Voltage
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A simple electromechanical diode nonvolatile memory (NVM) cell design was recently proposed and demonstrated to be well suited for implementation in a cross-point memory array architecture. In this paper, a scaling methodology for this new NVM technology is developed with the aid of a calibrated analytical model. A nanoelectromechanical NVM cell (with 20-nm minimum feature size) is projected to operate with voltages below 2 V and sub-1-ns programming time.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2014.2312612