A Miniaturized Unit Cell for Ultra-Broadband Active Millimeter-Wave Frequency Multiplication

A compact broadband unit cell for the design of broadband frequency multipliers is presented. Based on design methods from moderate frequencies, a novel integrated balanced field-effect transistor architecture is introduced, pushing ultra-broadband balanced frequency multiplication into the high mil...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2014-06, Vol.62 (6), p.1343-1351
Main Authors: Lewark, Ulrich J., Diebold, Sebastian, Wagner, Sandrine, Tessmann, Axel, Leuther, Arnulf, Zwick, Thomas, Kallfass, Ingmar
Format: Article
Language:English
Subjects:
Applied sciences
Balancing
Broadband
Circuit properties
Design. Technologies. Operation analysis. Testing
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Field effect transistors
GaAs frequency multipliers
Harmonic analysis
III-V devices
Integrated circuits
Logic gates
microwave and millimeter-wave devices and circuits
Microwave and submillimeter wave devices, electron transfer devices
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
microwave monolithic integrated circuit (MMIC) multipliers
Microwaves
Millimeter wave transistors
millimeter-microwave and millimeter-wave integrated circuits
MMICs
Multiplication
Pushing
Second harmonic generation
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Signal convertors
Topology
Unit cell
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Description
Summary:A compact broadband unit cell for the design of broadband frequency multipliers is presented. Based on design methods from moderate frequencies, a novel integrated balanced field-effect transistor architecture is introduced, pushing ultra-broadband balanced frequency multiplication into the high millimeter-wave range. The realized microwave monolithic integrated circuits (MMICs) using this topology provide second harmonic generation over several decades using only a single integrated transistor unit cell. The circuits are fabricated in a metamorphic HEMT technology for convenient integration into multifunctional MMICs and achieve relative bandwidths of 199% from 60 MHz to 80 GHz and 70.1% in D- and G-band (110-170 and 140-220 GHz).
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2014.2318272