Microdose Induced Drain Leakage Effects in Power Trench MOSFETs: Experiment and Modeling

We study experimentally and theoretically the micro-dose induced drain-source leakage current in the trench power MOSFETs under irradiation with high-LET heavy ions. We found experimentally that cumulative increase of leakage current occurs by means of stochastic spikes corresponding to a strike of...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on nuclear science 2014-08, Vol.61 (4), p.1531-1536
Main Authors: Zebrev, Gennady I., Vatuev, Alexander S., Useinov, Rustem G., Emeliyanov, Vladimir V., Anashin, Vasily S., Gorbunov, Maxim S., Turin, Valentin O., Yesenkov, Kirill A.
Format: Article
Language:English
Subjects:
Computer simulation
Heavy ions
Ions
Leakage current
Leakage currents
LET
Logic gates
Mathematical models
microdose effects
Monte Carlo
Monte Carlo methods
MOSFET
MOSFETs
Nuclear power generation
parametric failures
parasitic transistor
Radiation effects
single-event effects
source-drain leakage
Stochasticity
Strikes
total dose effects
trench power MOSFETs
Trenches
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We study experimentally and theoretically the micro-dose induced drain-source leakage current in the trench power MOSFETs under irradiation with high-LET heavy ions. We found experimentally that cumulative increase of leakage current occurs by means of stochastic spikes corresponding to a strike of single heavy ion into the MOSFET gate oxide. We simulate this effect with the proposed analytic model allowing to describe (including Monte Carlo methods) both the deterministic (cumulative dose) and stochastic (single event) aspects of the problem. Based on this model the survival probability assessment in space heavy ion environment with high LETs was proposed.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2014.2315852