A Near-Infrared Range Photodetector Based on Indium Nitride Nanocrystals Obtained Through Laser Ablation

We present a proof-of-concept photodetector that is sensitive in the near-infrared (NIR) range based on InN nanocrystals. Indium nitride nanocrystals (InN-NCs) are obtained through laser ablation of a high pressure chemical vapor deposition grown indium nitride thin film and are used as optically ac...

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Bibliographic Details
Published in:IEEE electron device letters 2014-09, Vol.35 (9), p.936-938
Main Authors: Tekcan, Burak, Alkis, Sabri, Alevli, Mustafa, Dietz, Nikolaus, Ortac, Bulend, Biyikli, Necmi, Okyay, Ali Kemal
Format: Article
Language:English
Subjects:
Educational institutions
Hafnium compounds
Indium
indium nitride
Laser ablation
Nanocrystals
near-infrared (NIR)
Photodetector
Photodetectors
Plasmons
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Summary:We present a proof-of-concept photodetector that is sensitive in the near-infrared (NIR) range based on InN nanocrystals. Indium nitride nanocrystals (InN-NCs) are obtained through laser ablation of a high pressure chemical vapor deposition grown indium nitride thin film and are used as optically active absorption region. InN-NCs are sandwiched between thin insulating films to reduce the electrical leakage current. Under -1 V applied bias, the recorded photoresponsivity values within 600-1100-nm wavelength range are as high as 3.05 × 10 -2 mA/W. An ultrathin layer of nanocrystalline InN thin film is, therefore, a promising candidate for NIR detection in large area schemes.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2014.2336795