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Substrate-Induced Noise Model and Parameter Extraction for High-Frequency Noise Modeling of Sub-Micron MOSFETs

In this paper, a substrate-induced drain-current noise model is developed in addition to the channel thermal noise to explain the non-white-noise characteristic found in the measured drain-current noise in the gigahertz range. The substrate-induced drain-current noise model is derived from the propo...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2014-09, Vol.62 (9), p.1973-1985
Main Authors: Shih Ni Ong, Kiat Seng Yeo, Chew, Kok Wai Johnny, Chan, Lye Hock Kelvin
Format: Article
Language:English
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Summary:In this paper, a substrate-induced drain-current noise model is developed in addition to the channel thermal noise to explain the non-white-noise characteristic found in the measured drain-current noise in the gigahertz range. The substrate-induced drain-current noise model is derived from the proposed small-signal equivalent circuit with a substrate coupling network and a substrate thermal noise source. The model parameter extraction method utilizing Y-parameter analysis on the proposed small-signal equivalent circuit is demonstrated. The model for the total drain-current noise, the gate-current noise, their cross-correlation, and thereafter the four noise parameters is presented and verified experimentally. Excellent agreement between simulated and measured noise data has been obtained over different dimensions and operating conditions.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2014.2340375