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Substrate-Induced Noise Model and Parameter Extraction for High-Frequency Noise Modeling of Sub-Micron MOSFETs
In this paper, a substrate-induced drain-current noise model is developed in addition to the channel thermal noise to explain the non-white-noise characteristic found in the measured drain-current noise in the gigahertz range. The substrate-induced drain-current noise model is derived from the propo...
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Published in: | IEEE transactions on microwave theory and techniques 2014-09, Vol.62 (9), p.1973-1985 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | In this paper, a substrate-induced drain-current noise model is developed in addition to the channel thermal noise to explain the non-white-noise characteristic found in the measured drain-current noise in the gigahertz range. The substrate-induced drain-current noise model is derived from the proposed small-signal equivalent circuit with a substrate coupling network and a substrate thermal noise source. The model parameter extraction method utilizing Y-parameter analysis on the proposed small-signal equivalent circuit is demonstrated. The model for the total drain-current noise, the gate-current noise, their cross-correlation, and thereafter the four noise parameters is presented and verified experimentally. Excellent agreement between simulated and measured noise data has been obtained over different dimensions and operating conditions. |
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ISSN: | 0018-9480 1557-9670 |
DOI: | 10.1109/TMTT.2014.2340375 |