Back-channel-etched thin-film transistor using c-axis-aligned crystal In-Ga-Zn oxide

Our crystalline In–Ga–Zn oxide (IGZO) thin film has a c‐axis‐aligned crystal (CAAC) structure and maintains crystallinity even on an amorphous base layer. Although the crystal has c‐axis alignment, its a‐axis and b‐axis have random arrangement; moreover, a clear grain boundary is not observed. We fa...

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Bibliographic Details
Published in:Journal of the Society for Information Display 2014-01, Vol.22 (1), p.55-67
Main Authors: Yamazaki, Shunpei, Hirohashi, Takuya, Takahashi, Masahiro, Adachi, Shunsuke, Tsubuku, Masashi, Koezuka, Junichi, Okazaki, Kenichi, Kanzaki, Yohsuke, Matsukizono, Hiroshi, Kaneko, Seiji, Mori, Shigeyasu, Matsuo, Takuya
Format: Article
Language:English
Subjects:
c-axis-aligned crystal (CAAC) structure
channel-etched TFT
In-Ga-Zn oxide (IGZO)
oxide semiconductor
Thin films
thin-film transistor
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Summary:Our crystalline In–Ga–Zn oxide (IGZO) thin film has a c‐axis‐aligned crystal (CAAC) structure and maintains crystallinity even on an amorphous base layer. Although the crystal has c‐axis alignment, its a‐axis and b‐axis have random arrangement; moreover, a clear grain boundary is not observed. We fabricated a back‐channel‐etched thin‐film transistor (TFT) using the CAAC‐IGZO film. Using the CAAC‐IGZO film, more stable TFT characteristics, even with a short channel length, can be obtained, and the instability of the back channel, which is one of the biggest problems of IGZO TFTs, is solved. As a result, we improved the process of manufacturing back‐channel‐etched TFTs.
ISSN:1071-0922
1938-3657
DOI:10.1002/jsid.211