Solid-State Bipolar Marx Modulator Modeling

A mathematical model that simulates the operation of a solid-state bipolar Marx modulator topology, including the influence of parasitic capacitances is presented and discussed as a tool to analyze the circuit behavior and to assist the design engineer to select the semiconductor components and to e...

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Bibliographic Details
Published in:IEEE transactions on plasma science 2014-10, Vol.42 (10), p.3048-3056
Main Authors: Canacsinh, Hiren, Redondo, Luis M., Silva, José Fernando, Schamiloglu, Edl
Format: Article
Language:English
Subjects:
Capacitance
Capacitors
Circuit design
Circuits
Computer simulation
Design analysis
Diodes
Electric potential
Insulated gate bipolar transistors
Integrated circuit modeling
Marx generator modeling
Mathematical model
Mathematical models
Modulation
Modulators
parasitic capacitance
pulsed power
Semiconductor diodes
semiconductor switches
Semiconductors
Simulation
solid-state Marx
Transistors
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Description
Summary:A mathematical model that simulates the operation of a solid-state bipolar Marx modulator topology, including the influence of parasitic capacitances is presented and discussed as a tool to analyze the circuit behavior and to assist the design engineer to select the semiconductor components and to enhance the operating performance. Simulations show good agreement with experimental results, considering a four stage circuit assembled with 1200 V isolated gate bipolar transistors and diodes, operating at 1000 V dc input voltage and 1-kHz frequency, giving 4 kV and 10-μs output pulses into several resistive loads. Results show that parasitic capacitances between Marx cells to ground can significantly load the solid-state switches, adding new operating circuit conditions.
ISSN:0093-3813
1939-9375
DOI:10.1109/TPS.2014.2337716