Determining Drain Current Characteristics and Channel Temperature Rise in GaN HEMTs

We experimentally investigated how self-heating affected the transient response of drain current in AlGaN/GaN high-electron-mobility transistors. Since drain current depends on temperature, we measured the drain current to assess the transient temperature rise of the active area. Based on the transi...

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Bibliographic Details
Published in:IEEE transactions on device and materials reliability 2014-12, Vol.14 (4), p.978-982
Main Authors: Zhang, Yamin, Feng, Shiwei, Zhu, Hui, Gong, Xueqin, Shi, Lei, Guo, Chunsheng
Format: Magazinearticle
Language:English
Subjects:
Aluminum gallium nitride
Channels
Current measurement
Devices
Drains
Gallium nitride
Gallium nitrides
HEMTs
High electron mobility transistors
MODFETs
Semiconductor devices
Temperature measurement
Transient analysis
Transient responses
Transistors
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Summary:We experimentally investigated how self-heating affected the transient response of drain current in AlGaN/GaN high-electron-mobility transistors. Since drain current depends on temperature, we measured the drain current to assess the transient temperature rise of the active area. Based on the transient temperature rise, we used the structure function method to analyze the resistance to temperature rise. This can be used to extract the chip temperature rise even for a packaged device. We verified the proposed electrical method by comparing its results to those measured by the forward-Schottky-junction-characteristic method, revealing good agreement.
ISSN:1530-4388
1558-2574
DOI:10.1109/TDMR.2014.2356233