Mechanism of preferential nucleation of []-oriented GaN twins on an SiO2-patterned m-plane sapphire substrate

The mechanism of preferential nucleation of []‐oriented GaN faceted twins on an SiO2‐patterned m‐plane sapphire substrate was investigated. Each variant of twins, which were enclosed by c‐ and m‐facets, was observed to be preferentially nucleated over the opposite sides of an SiO2 pattern. It was hy...

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Bibliographic Details
Published in:Journal of applied crystallography 2015-02, Vol.48 (1), p.195-199
Main Authors: Yoon, Hansub, Jue, Miyeon, Lee, Hyemi, Lee, Sanghwa, Kim, Chinkyo
Format: Article
Language:English
Subjects:
Crystallography
effective surface energy
GaN
m-plane sapphire
Morphology
nucleation
semipolar
Substrates
twin
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Summary:The mechanism of preferential nucleation of []‐oriented GaN faceted twins on an SiO2‐patterned m‐plane sapphire substrate was investigated. Each variant of twins, which were enclosed by c‐ and m‐facets, was observed to be preferentially nucleated over the opposite sides of an SiO2 pattern. It was hypothesized, from the fact that the same method of Legendre transformation is applied to a Wulff plot and a kinetic Wulff plot to determine the growth morphology of a crystalline domain, that the effective surface energy of c‐ and m‐facets would be proportional to the growth rate of the respective facet. On the basis of this hypothesis, minimization of the effective surface energy of a nucleated domain was proposed as a mechanism of preferential nucleation. This proposed mechanism successfully explained the preferential nucleation behaviour.
ISSN:1600-5767
0021-8898
1600-5767
DOI:10.1107/S1600576714027873