Demagnification and Magnification Effects in One-Step Noncontact Pattern Transfer by Direct-Current Plasma Immersion Ion Implantation

• Published in: IEEE transactions on plasma science 2015-02, Vol.43 (2), p.552-556
• Main Authors: Ji Luo, Cheng, Samson H. S., Kwok, Dixon Tat Kun, Cheng Xi Wang, Li, L., Chu, Paul K.
• Format: Article
• Language: English
• Subjects: Electric potential; Ion implantation; Mathematical model; Metals; Nanostructured materials; Particle-in-cell (PIC) simulation; pattern transfer; Plasma immersion ion implantation; plasma immersion ion implantation (PIII); Scanning electron microscopy; Silicon; Silicon wafers; Simulation; Substrates
• ISSN: 0093-3813; 1939-9375
• DOI: 10.1109/TPS.2014.2363943

Complex patterns formed by an array of micrometer spots can be transferred onto a silicon wafer using a one-step noncontact pattern transfer method by dc plasma immersion ion implantation. The transferred images can be demagnified or magnified by placing a metal ring in contact with the metal mask (demagnification) or sample (magnification). Scanning electron microscopy reveals that the center to center distance between the imaged holes can be reduced from 300 to 245 μm, that is, center to center distance in the mask. The 2-D multiple-grid particle-in-cell simulation illustrates that the electric field between the metal mask and sample leads to the demagnification and magnification effects. This one-step and truly noncontact process that has potential applications in transferring pattern onto soft and flexible substrates is applicable to brittle nanostructures that may not survive etching.