Long Integrated Bragg Gratings for SoI Wafer Metrology

Phase-sensitive photonic devices fabricated in silicon-on-insulator platform can have their response significantly modified by wafer height fluctuations. In this letter, we demonstrate a novel metrology technique for measuring on-chip thickness variations using long integrated chirped Bragg gratings...

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Bibliographic Details
Published in:IEEE photonics technology letters 2015-04, Vol.27 (7), p.755-758
Main Authors: Ayotte, Nicolas, Simard, Alexandre D., LaRochelle, Sophie
Format: Article
Language:English
Subjects:
Bragg gratings
Chirp
Gratings
Integrated optics
Loss measurement
Meteorology
Nanophotonics
Nanotechnology
Optical waveguides
Reflection
Semiconductor device measurement
Silicon on insulator technology
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Summary:Phase-sensitive photonic devices fabricated in silicon-on-insulator platform can have their response significantly modified by wafer height fluctuations. In this letter, we demonstrate a novel metrology technique for measuring on-chip thickness variations using long integrated chirped Bragg gratings. Thickness variations are recovered from the measurement of the complex transmission and reflection spectra using an inverse scattering algorithm. With 1-cm long sidewall gratings on 1.2-μm wide waveguides, we measure waveguide height variations with nanometer-scale precision and tens of micrometer of longitudinal resolution. The results are confirmed by atomic force microscopy measurements.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2015.2391174