Effects of High-Temperature Annealing on Operation Characteristics of a-In-Ga-Zn-O TFTs

We report operation characteristics of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) annealed in dry O 2 at temperatures up to 700 ° C. The largest TFT mobilities were obtained by annealing at 200 ° C-300 ° C and the smallest subthreshold voltage swing ( S) was obtained at 200 ° C, whil...

Full description

Saved in:
Bibliographic Details
Published in:Journal of display technology 2014-11, Vol.10 (11), p.979-983
Main Authors: Hanyu, Yuichiro, Abe, Katsumi, Domen, Kay, Nomura, Kenji, Hiramatsu, Hidenori, Kumomi, Hideya, Hosono, Hideo, Kamiya, Toshio
Format: Article
Language:English
Subjects:
Amorphous materials
Annealing
defect
Density
Deterioration
Display devices
Electron traps
Grain boundaries
hydrogen passivation
Photonics
Semiconductor devices
Spectroscopy
Thin film transistors
thin-film transistors (TFTs)
Voltage
Voltage measurement
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report operation characteristics of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) annealed in dry O 2 at temperatures up to 700 ° C. The largest TFT mobilities were obtained by annealing at 200 ° C-300 ° C and the smallest subthreshold voltage swing ( S) was obtained at 200 ° C, while those annealed at higher T exhibited poorer mobilities and S values. The TFTs annealed at ≥ 600 ° C were crystallized and exhibited further poorer characteristics probably due to grain boundary issues; while, the deterioration by the 400 ° C-500 ° C annealing is attributed to depletion of hydrogen and consequent de-passivation effects. Device simulations and photoresponse spectroscopy extracted systematic variation of trap densities in the a-IGZO layer.
ISSN:1551-319X
1558-9323
DOI:10.1109/JDT.2014.2352860