Effects of High-Temperature Annealing on Operation Characteristics of a-In-Ga-Zn-O TFTs

We report operation characteristics of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) annealed in dry O 2 at temperatures up to 700 ° C. The largest TFT mobilities were obtained by annealing at 200 ° C-300 ° C and the smallest subthreshold voltage swing ( S) was obtained at 200 ° C, whil...

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Published in:Journal of display technology 2014-11, Vol.10 (11), p.979-983
Main Authors: Hanyu, Yuichiro, Abe, Katsumi, Domen, Kay, Nomura, Kenji, Hiramatsu, Hidenori, Kumomi, Hideya, Hosono, Hideo, Kamiya, Toshio
Format: Article
Language:English
Subjects:
Amorphous materials
Annealing
defect
Density
Deterioration
Display devices
Electron traps
Grain boundaries
hydrogen passivation
Photonics
Semiconductor devices
Spectroscopy
Thin film transistors
thin-film transistors (TFTs)
Voltage
Voltage measurement
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cited_by cdi_FETCH-LOGICAL-c434t-9bcaa17283792438bed5750315c0600165871c10545b19d09322ee953fb72c2e3
cites cdi_FETCH-LOGICAL-c434t-9bcaa17283792438bed5750315c0600165871c10545b19d09322ee953fb72c2e3
container_end_page 983
container_issue 11
container_start_page 979
container_title Journal of display technology
container_volume 10
creator Hanyu, Yuichiro
Abe, Katsumi
Domen, Kay
Nomura, Kenji
Hiramatsu, Hidenori
Kumomi, Hideya
Hosono, Hideo
Kamiya, Toshio
description We report operation characteristics of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) annealed in dry O 2 at temperatures up to 700 ° C. The largest TFT mobilities were obtained by annealing at 200 ° C-300 ° C and the smallest subthreshold voltage swing ( S) was obtained at 200 ° C, while those annealed at higher T exhibited poorer mobilities and S values. The TFTs annealed at ≥ 600 ° C were crystallized and exhibited further poorer characteristics probably due to grain boundary issues; while, the deterioration by the 400 ° C-500 ° C annealing is attributed to depletion of hydrogen and consequent de-passivation effects. Device simulations and photoresponse spectroscopy extracted systematic variation of trap densities in the a-IGZO layer.
doi_str_mv 10.1109/JDT.2014.2352860
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source IEEE Electronic Library (IEL) Journals
subjects Amorphous materials
Annealing
defect
Density
Deterioration
Display devices
Electron traps
Grain boundaries
hydrogen passivation
Photonics
Semiconductor devices
Spectroscopy
Thin film transistors
thin-film transistors (TFTs)
Voltage
Voltage measurement
title Effects of High-Temperature Annealing on Operation Characteristics of a-In-Ga-Zn-O TFTs
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