Enhanced Light Extraction Efficiency of GaN-Based Hybrid Nanorods Light-Emitting Diodes

High light extraction GaN-based light-emitting diodes (LEDs) with a hybrid structure of straight nanorods located in an array of microholes have been successfully demonstrated. Via the nanoimprint lithography and photolithography techniques, high aspect-ratio light-guiding InGaN/GaN nanorods can be...

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Bibliographic Details
Published in:IEEE journal of selected topics in quantum electronics 2015-07, Vol.21 (4), p.354-360
Main Authors: Huang, Jhih-Kai, Liu, Che-Yu, Chen, Tzi-Pei, Huang, Hung-Wen, Lai, Fang-I, Lee, Po-Tsung, Lin, Chung-Hsiang, Chang, Chun-Yen, Kao, Tsung Sheng, Kuo, Hao-Chung
Format: Article
Language:English
Subjects:
Arrays
Devices
Extraction
Gallium nitride
Hybrid structures
Indium gallium nitrides
Light emitting diodes
Lithography
Microholes
Nanorods
Nanoscale devices
Nanotechnology
Optoelectronic devices
Photolithography
Photonics
Quantum well devices
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Summary:High light extraction GaN-based light-emitting diodes (LEDs) with a hybrid structure of straight nanorods located in an array of microholes have been successfully demonstrated. Via the nanoimprint lithography and photolithography techniques, high aspect-ratio light-guiding InGaN/GaN nanorods can be fabricated and regularly arranged in microholes, resulting in a great improvement of the light extraction for the GaN-based LED device. The light output power of the hybrid nanorods LED is 22.04 mW at the driving current standard of 25.4 A/cm 2 , an enhancement of 38.7% to the conventional GaN-based LEDs. Furthermore, with a modification of the hybrid structures' dimensions and locations, the emitted optical energy can be redistributed to obtain light-emitting devices with homogenueous optical field distributions.
ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2015.2389529