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Enhanced Light Extraction Efficiency of GaN-Based Hybrid Nanorods Light-Emitting Diodes

High light extraction GaN-based light-emitting diodes (LEDs) with a hybrid structure of straight nanorods located in an array of microholes have been successfully demonstrated. Via the nanoimprint lithography and photolithography techniques, high aspect-ratio light-guiding InGaN/GaN nanorods can be...

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Published in:	IEEE journal of selected topics in quantum electronics 2015-07, Vol.21 (4), p.354-360
Main Authors:	Huang, Jhih-Kai, Liu, Che-Yu, Chen, Tzi-Pei, Huang, Hung-Wen, Lai, Fang-I, Lee, Po-Tsung, Lin, Chung-Hsiang, Chang, Chun-Yen, Kao, Tsung Sheng, Kuo, Hao-Chung
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Language:	English
Subjects:	Arrays Devices Extraction Gallium nitride Hybrid structures Indium gallium nitrides Light emitting diodes Lithography Microholes Nanorods Nanoscale devices Nanotechnology Optoelectronic devices Photolithography Photonics Quantum well devices
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container_title	IEEE journal of selected topics in quantum electronics
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creator	Huang, Jhih-Kai Liu, Che-Yu Chen, Tzi-Pei Huang, Hung-Wen Lai, Fang-I Lee, Po-Tsung Lin, Chung-Hsiang Chang, Chun-Yen Kao, Tsung Sheng Kuo, Hao-Chung
description	High light extraction GaN-based light-emitting diodes (LEDs) with a hybrid structure of straight nanorods located in an array of microholes have been successfully demonstrated. Via the nanoimprint lithography and photolithography techniques, high aspect-ratio light-guiding InGaN/GaN nanorods can be fabricated and regularly arranged in microholes, resulting in a great improvement of the light extraction for the GaN-based LED device. The light output power of the hybrid nanorods LED is 22.04 mW at the driving current standard of 25.4 A/cm 2 , an enhancement of 38.7% to the conventional GaN-based LEDs. Furthermore, with a modification of the hybrid structures' dimensions and locations, the emitted optical energy can be redistributed to obtain light-emitting devices with homogenueous optical field distributions.
doi_str_mv	10.1109/JSTQE.2015.2389529
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Via the nanoimprint lithography and photolithography techniques, high aspect-ratio light-guiding InGaN/GaN nanorods can be fabricated and regularly arranged in microholes, resulting in a great improvement of the light extraction for the GaN-based LED device. The light output power of the hybrid nanorods LED is 22.04 mW at the driving current standard of 25.4 A/cm 2 , an enhancement of 38.7% to the conventional GaN-based LEDs. 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subjects	Arrays Devices Extraction Gallium nitride Hybrid structures Indium gallium nitrides Light emitting diodes Lithography Microholes Nanorods Nanoscale devices Nanotechnology Optoelectronic devices Photolithography Photonics Quantum well devices
title	Enhanced Light Extraction Efficiency of GaN-Based Hybrid Nanorods Light-Emitting Diodes
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