Large-Area MOCVD Growth of Ga^sub 2^O3 in a Rotating Disc Reactor

• Published in: Journal of electronic materials 2015-05, Vol.44 (5), p.1357
• Main Authors: Sbrockey, Nick M, Salagaj, Thomas, Coleman, Elane, Tompa, Gary S, Moon, Youngboo, Kim, Myung Sik
• Format: Article
• Language: English
• Subjects: Electronics; Semiconductors; Thin films
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-014-3566-7

(ProQuest: ... denotes formulae and/or non-USASCII text omitted; see image) Issue Title: 2014 Electronic Materials Conference. Guest Editors: Angel Yanguas-Gil, Ganesh Balakrishnan, Joshua D. Cladwell, Jamie Phillips, Joshua Zide, Michael Tiscler, John Baniecki, Suzanne Mohney, and Shadi Shahedipour-Sandvik Gallium oxide is a wide-bandgap semiconductor material which is being developed for a range of electronic and electrooptic device applications. Commercial implementation of these devices will require production-scale technology for Ga^sub 2^O3 film deposition. This work demonstrated deposition of uniform Ga^sub 2^O3 films on both 50-mm-diameter (0001) sapphire and 200-mm-diameter (100) silicon substrates, using a rotating disc metalorganic chemical vapor deposition reactor. The source reactants were trimethylgallium and oxygen. The resulting Ga^sub 2^O3 films were smooth, optically transparent, and highly insulating and had excellent thickness uniformity. Ga^sub 2^O3 films deposited on (0001) sapphire at temperatures of at least 600°C and pressures of at least 45 Torr consisted of (...)-oriented [beta]-Ga^sub 2^O3 in the as-deposited state. The [beta]-crystal structure was shown to be stable on annealing to 800°C, in either air or nitrogen atmosphere. A Ga^sub 2^O3 film deposited at a lower temperature was shown to crystallize to a similar (...)-oriented [beta]-Ga^sub 2^O3 structure on postdeposition annealing at 800°C.