Optoelectronic properties of porous silicon heterojunction photodetector

In this paper, formation of a nano-crystaline porous silicon layer on n -type and P -type crystalline Si substrates prepared by the electrochemical etching and photo-electrochemical etching techniques (in order to fabricate heterojunctions photodetector) has been studied. The fabricated Al/PS/n-Si/A...

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Bibliographic Details
Published in:Indian journal of physics 2014, Vol.88 (1), p.59-63
Main Authors: Hadi, H. A., Ismail, R. A., Habubi, N. F.
Format: Article
Language:English
Subjects:
Astrophysics and Astroparticles
Biophysics
Electric properties
Nanostructured materials
Optics
Original Paper
Physics
Physics and Astronomy
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Summary:In this paper, formation of a nano-crystaline porous silicon layer on n -type and P -type crystalline Si substrates prepared by the electrochemical etching and photo-electrochemical etching techniques (in order to fabricate heterojunctions photodetector) has been studied. The fabricated Al/PS/n-Si/Al photodetector has responsivity to white light higher than that for Al/PS/p-Si/Al photodetector. The values of minority carrier life time obtained are 125 and 208 μs for junctions made on n -type silicon substrates at etching time of 5 and 10 min respectively. While, junctions made on p -type silicon substrates prepared at the same etching time have life time of 83–113 μs.
ISSN:0973-1458
0974-9845
DOI:10.1007/s12648-013-0375-4