Optoelectronic characteristics of >9% efficient bilayered CuZnSn(S,Se)4 photovoltaic device

Using binary and ternary chalcogenide nanoparticle solutions as precursors, a bi‐layered CZTSSe film is formed after being annealed in selenium atmosphere. Based on the CZTSSe film, a high efficiency thin‐film photovoltaic device (9.02% conversion efficiency) is made. Detailed characterizations of t...

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Bibliographic Details
Published in:Physica status solidi. PSS-RRL. Rapid research letters 2015-04, Vol.9 (4), p.236-240
Main Authors: Wu, Wei, Tassi, Nancy G., Cao, Yanyan, Caspar, Jonathan V., Roy-Choudhury, Kaushik, Zhang, Lei
Format: Article
Language:English
Subjects:
CuZnSn(S
CuZnSn(S,Se)4
Electronics
Nanoparticles
Photovoltaic cells
photovoltaics
Se)4
solar cells
solution processing
Thin films
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Summary:Using binary and ternary chalcogenide nanoparticle solutions as precursors, a bi‐layered CZTSSe film is formed after being annealed in selenium atmosphere. Based on the CZTSSe film, a high efficiency thin‐film photovoltaic device (9.02% conversion efficiency) is made. Detailed characterizations of the device's performance and composition from XPS depth profiling are presented, and based on the results we discuss possible areas for further efficiency improvement. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) Using binary and ternary chalcogenide nanoparticle solutions as precursors, a bilayered CuZnSn(S,Se)4 (CZTSSe) film is formed after being annealed in selenium atmosphere. Based on the CZTSSe film, a high efficiency thin‐film photovoltaic device (9.02% conversion efficiency) is made. Detailed device characteristics and composition from XPS depth profiling are presented, and possible areas for further efficiency improvement are discussed.
ISSN:1862-6254
1862-6270
DOI:10.1002/pssr.201510048