Optoelectronic characteristics of >9% efficient bilayered CuZnSn(S,Se)4 photovoltaic device

Using binary and ternary chalcogenide nanoparticle solutions as precursors, a bi‐layered CZTSSe film is formed after being annealed in selenium atmosphere. Based on the CZTSSe film, a high efficiency thin‐film photovoltaic device (9.02% conversion efficiency) is made. Detailed characterizations of t...

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Published in:Physica status solidi. PSS-RRL. Rapid research letters 2015-04, Vol.9 (4), p.236-240
Main Authors: Wu, Wei, Tassi, Nancy G., Cao, Yanyan, Caspar, Jonathan V., Roy-Choudhury, Kaushik, Zhang, Lei
Format: Article
Language:English
Subjects:
CuZnSn(S
CuZnSn(S,Se)4
Electronics
Nanoparticles
Photovoltaic cells
photovoltaics
Se)4
solar cells
solution processing
Thin films
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cited_by cdi_FETCH-LOGICAL-c3408-862adfa8b5a30f31b0602d8132f0ee0932a863ec503d06b744c9f67b5266a2123
cites cdi_FETCH-LOGICAL-c3408-862adfa8b5a30f31b0602d8132f0ee0932a863ec503d06b744c9f67b5266a2123
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container_issue 4
container_start_page 236
container_title Physica status solidi. PSS-RRL. Rapid research letters
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creator Wu, Wei
Tassi, Nancy G.
Cao, Yanyan
Caspar, Jonathan V.
Roy-Choudhury, Kaushik
Zhang, Lei
description Using binary and ternary chalcogenide nanoparticle solutions as precursors, a bi‐layered CZTSSe film is formed after being annealed in selenium atmosphere. Based on the CZTSSe film, a high efficiency thin‐film photovoltaic device (9.02% conversion efficiency) is made. Detailed characterizations of the device's performance and composition from XPS depth profiling are presented, and based on the results we discuss possible areas for further efficiency improvement. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) Using binary and ternary chalcogenide nanoparticle solutions as precursors, a bilayered CuZnSn(S,Se)4 (CZTSSe) film is formed after being annealed in selenium atmosphere. Based on the CZTSSe film, a high efficiency thin‐film photovoltaic device (9.02% conversion efficiency) is made. Detailed device characteristics and composition from XPS depth profiling are presented, and possible areas for further efficiency improvement are discussed.
doi_str_mv 10.1002/pssr.201510048
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subjects CuZnSn(S
CuZnSn(S,Se)4
Electronics
Nanoparticles
Photovoltaic cells
photovoltaics
Se)4
solar cells
solution processing
Thin films
title Optoelectronic characteristics of >9% efficient bilayered CuZnSn(S,Se)4 photovoltaic device
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